Boron Isotopes

Boron has two stable isotopes ¹⁰B and ¹¹B, with natural abundances of approximately 19.78% and 80.22% respectively. ¹⁰B features an extremely high thermal neutron capture cross-section, making it an outstanding neutron-absorbing material for nuclear power applications such as reactor power regulation and emergency shutdown systems. In contrast, ¹¹B barely absorbs neutrons and serves as a core material for semiconductor ion implantation.

 

BoronHub Offers a full portfolio of high-abundance boron isotopes with customizable enrichment levels to meet client specifications. Isotopic ¹⁰B exists as cubic β-type crystals with high purity and enrichment, and readily forms alloys with metals. Enriched boric acid-10 boasts a purity above 99.95 wt%, widely used as a soluble chemical shim in pressurized water reactors (PWRs). Enriched boron trifluoride-11 has a purity exceeding 99.999%, functioning as a critical p-type ion implantation dopant for the manufacturing of semiconductor chips and display panels.

 

All products are packaged in PTFE bottles filled with inert shielding gas. Customization of purity, isotope abundance and packaging specifications is available, supporting cutting-edge sectors including nuclear power, semiconductors, biomedicine and aerospace.

  • Isotope ¹⁰B With Natural Abundance Of 19.78%
    Isotope ¹⁰B With Natural Abundance Of 19.78% Cas No.14798-12-0
    ¹⁰B is one of Boron’s two stable isotopes with a natural abundance of roughly 19.78%. It delivers an exceptionally large thermal neutron capture cross-section, a broad absorption energy spectrum, stable cross-section performance and negligible secondary radiation generation, ensuring outstanding safety. Supplied as high-purity crystals with adjustable enrichment levels, it is the core radionuclide material for nuclear reactor power control, radiation shielding and BNCT cancer therapy.
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  • Isotope Boron-11
    Boron-11 Isotope With Natural Abundance Of 80.22% Cas No.14798-13-1
    ¹¹B is Boron’s second stable isotope with a natural abundance of approximately 80.22%. It has virtually no thermal neutron absorption cross-section, rendering it an irreplaceable core material for semiconductor ion implantation processes. Our high-purity, tunable-enrichment grades are widely adopted in chip fabrication, display panels and other semiconductor segments.
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  • Enriched Boric Acid-10
    Enriched Boric Acid-10 With ¹⁰B Enrichment ≥99% And Purity ≥99.95% Cas No.13813-79-1
    Enriched Boric Acid-10 is a high-end boric acid synthesized from high-abundance ¹⁰B raw material, with ¹⁰B enrichment ≥99% and purity ≥99.95 wt%. It exhibits excellent thermal neutron absorption performance and is extensively deployed as a soluble chemical shim in pressurized water nuclear reactors. Its key technical indicators meet world-class standards, enabling domestic substitution of imported equivalents.   Official Statement In accordance with Clause 1C225 of the current China Dual-Use Items Export Control List and relevant HS code customs supervision requirements: Enriched boric acid-10 (¹⁰B-enriched boric acid) falls under controlled dual-use items subject to nuclear non-proliferation regulation. Our company hereby solemnly undertakes that an Export License for Dual-Use Items and Related Technologies must be obtained prior to any export shipment. All clients are required to submit a signed End-User Certificate (EUC) issued by the overseas end user, which shall clearly specify the end application, contain an undertaking that the product will not be deployed in nuclear facilities or military programs, and stipulate that resale or re-exportation is prohibited without prior written approval from Chinese authorities.
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  • Enriched Boric Acid-11
    Enriched Boric Acid-11(H₃¹¹BO₃) With CAS No.13813-78-0
    Enriched Boric acid-11 is a stable isotopic boric acid synthesized from high-abundance ¹¹B feedstock, with CAS No. 13813-78-0 and molecular formula H₃¹¹BO₃. It appears as white powdery crystals or lustrous flaky crystals. ¹¹B exhibits nearly zero thermal neutron absorption cross-section (thermal neutron capture cross-section of merely 0.005 barns). It serves as a critical raw material for semiconductor ion implantation and special material fabrication, widely adopted in advanced-node chip manufacturing and special alloy industries.  
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  • Enriched Boron Trifluoride-11
    Enriched Boron Trifluoride-11(¹¹BF₃) With ¹¹B enrichment ≥99.9% And Purity ≥99.999% Cas No.20654-88-0
    Enriched Boron trifluoride-11 (¹¹BF₃) is an electronic specialty gas manufactured from high-abundance ¹¹B feedstock, with ¹¹B enrichment ≥99.9% and purity ≥99.999%. As a vital p-type ion implantation dopant gas, it is indispensable for fabricating advanced-node semiconductor chips and display panels.  
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